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| STM9410 SamHop Microelectronics Corp. OCT.29, 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES ( m ) MAX ID 6.3A RDS(ON) Super high dense cell design for low RDS(ON). 32 @ VGS = 10V 55 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TA=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 20 6.3 25 1.7 2.5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 50 C/W 1 STM9410 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 6A VGS = 4.5V,ID = 5A VDS = 5V, VGS = 10V VDS = 5V, ID = 6A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 27 50 15 9 830 140 100 17 6 23 11 17 8 3 3 2.5 32 55 V m ohm m ohm ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c VDS =15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID = 1A, VGS = 10V, RGEN = 10 ohm VDS =15V, ID =1A,VGS =10V VDS =15V, ID =1A,VGS =4.5V VDS =15V, ID = 1A, VGS =10V ns ns ns ns nC nC nC nC STM9410 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.82 1.1 V C DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 10 VGS=5,4.3,2V 8 20 25 ID, Drain Current(A) 6 4 2 0 ID, Drain Current (A) 25 C 15 10 Tj=125 C VGS=1.5V 0 0.5 1 1.5 2 2.5 3 5 -55 C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), On-Resistance(Ohms) 1200 1000 0.030 Figure 2. Transfer Characteristics VGS=10V 0.025 0.020 Tj=125 C 0.015 0.010 0.005 0 -55 C 25 C C, Capacitance (pF) Ciss 800 600 400 200 0 Crss 0 5 10 15 20 25 30 Coss 0 5 10 15 20 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 3 S T M9410 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 25 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 gFS , T rans conductance (S ) Is , S ource-drain current (A) 20 20 15 10 5 0 0 5 10 V DS =5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 10 RD ON S( )L it V G S , G ate to S ource V oltage (V ) V DS =15V ID=1A im ID, Drain C urrent (A) 10m 100 ms s 11 DC 1s 0.1 0.03 0.1 VGS =10V S ingle P ulse T A=25 C 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area STM9410 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. RqJA (t)=r (t) * RqJA 2. RqJA=See Datasheet 3. TJM-TA = PDM* RqJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5 STM9410 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H SYMBOLS A A1 D E H L MILLIMETERS MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X INCHES MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 6 STM9410 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 7 |
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